BYD13 Datasheet, PDF (4/7 Pages) NXP Semiconductors – Controlled avalanche rectifiers

Philips Semiconductors
Controlled avalanche rectifiers
GRAPHICAL DATA
han_Id_Fb₍o_Ao_Vk², _).h⁰alfpage
(A)
1.6
MBG039
1.2
0.8
0.4
0
0
40
80
a = 1.57; V_R = V_RRMmax; δ = 0.5.
Lead length 10 mm.
120
160
200
Ttp (^oC)
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Product specification
BYD13 series
han_Id_Fb₍o_Ao_Vk¹,_).h⁰alfpage
(A)
0.8
MBG055
0.6
0.4
0.2
0
0
40
80
120
160
200
Tamb (^oC)
a = 1.57; V_R = V_RRMmax; δ = 0.5.
Device mounted as shown in Fig.9.
Fig.3 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook², ^.h⁵alfpage
P
(W)
2.0
1.5
1.0
0.5
MGC741
a = 3 2.5 2 1.57
1.42
handboo²k,⁰h⁰alfpage
Tj
( ^oC)
150
MGC736
100
D
G
J
K
M
50
0
0
0.4
0.8
1.2
1.6
IF(AV) (A)
a = I_F(RMS)/I_F(AV); V_R = V_RRMmax; δ = 0.5.
Fig.4
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
0
0
400
800
1200
VR, VRRM (V)
Solid line = V_R.
Dotted line = V_RRM; δ = 0.5.
Fig.5 Maximum permissible junction temperature
as a function of reverse voltage.
1996 May 24
4