BYD13 Datasheet, PDF (3/7 Pages) NXP Semiconductors – Controlled avalanche rectifiers

Philips Semiconductors
Controlled avalanche rectifiers
Product specification
BYD13 series
SYMBOL
PARAMETER
I_F(AV)
average forward current
I_FSM
non-repetitive peak forward current
E_RSM
T_stg
T_j
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
CONDITIONS
T_tp = 55 °C; lead length = 10 mm;
averaged over any 20 ms period;
see Figs 2 and 4
T_amb = 65 °C; PCB mounting
(see Fig.9);
averaged over any 20 ms period;
see Figs 3 and 4
t = 10 ms half sinewave;
T_j = T_{j max} prior to surge;
V_R = V_RRMmax
L = 120 mH; T_j = T_{j max} prior to
surge; inductive load switched off
see Fig.5
MIN.
−
MAX. UNIT
1.40 A
−
0.75 A
−
20 A
−
7 mJ
−65 +175 °C
−65 +175 °C
ELECTRICAL CHARACTERISTICS
T_j = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V_F
V_(BR)R
I_R
t_rr
C_d
forward voltage
reverse avalanche
breakdown voltage
I_F = 1 A; T_j = T_{j max;} see Fig.6
I_F = 1 A; see Fig.6
I_R = 0.1 mA
BYD13D
BYD13G
BYD13J
BYD13K
BYD13M
reverse current
reverse recovery time
diode capacitance
V_R = V_RRMmax; see Fig.7
V_R = V_RRMmax; T_j = 165 °C; see Fig.7
when switched from I_F = 0.5 A to I_R = 1 A;
measured at I_R = 0.25 A; see Fig.10
V_R = 0 V; f = 1 MHz; see Fig.8
MIN.
−
−
225
450
650
900
1 100
−
−
−
−
TYP.
−
−
MAX. UNIT
0.93 V
1.05 V
−
−V
−
−V
−
−V
−
−V
−
−V
−
1 µA
−
100 µA
3
− µs
21
− pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
R_{th j-tp}
R_{th j-a}
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
60 K/W
120 K/W
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9.
For more information please refer to the “General Part of associated Handbook”.
1996 May 24
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