BYC5-600 Datasheet, PDF (4/6 Pages) NXP Semiconductors – Rectifier diode ultrafast, low switching loss

Philips Semiconductors
Rectifier diode
ultrafast, low switching loss
Product specification
BYC5-600
I
F
dI
F
dt
t
rr
time
Q
s
I
R
I
rrm
10% ^100%
Fig.9. Definition of reverse recovery parameters t_rr, I_rrm
Peak forward recovery voltage, Vfr (V)
20
Tj = 25 C
IF = 10 A
15
10
BYC5-600
typ
5
0
0
50
100
150
200
Rate of change of current, dIF/dt (A/ s)
Fig.10. Typical forward recovery voltage, V_fr as a
function of rate of change of current dI_F/dt.
IF
time
VF
V _fr
VF
time
Fig.11. Definition of forward recovery voltage V_fr
Forward current, IF (A)
10
Tj = 25 C
Tj = 150 C
8
BYC5-600
6
typ
max
4
2
0
0
1
2
3
4
Forward voltage, VF (V)
Fig.12. Typical and maximum forward characteristic
I_F = f(V_F); T_j = 25˚C and 150˚C.
100mA ^{Reverse leakage current (A)}
BYC5-600
10mA
1mA
100uA
10uA
Tj = 125 C
100 C
75 C
50 C
25 C
1uA
0
100
200
300
400
500
600
Reverse voltage (V)
Fig.13. Typical reverse leakage current as a function
of reverse voltage. I_R = f(V_R); parameter T_j
10 ^{Transient thermal impedance, Zth j-mb (K/W)}
1
0.1
0.01
P_D
tp
D
=
tp
T
0.001
1us
T
t
10us 100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s)
BYV29
Fig.14. Maximum thermal impedance Z_{th j-mb} as a
function of pulse width.
September 1998
4
Rev 1.100