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| BYC5-600 Datasheet, PDF (1/6 Pages) NXP Semiconductors – Rectifier diode ultrafast, low switching loss | |||
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Philips Semiconductors
Rectifier diode
ultrafast, low switching loss
Product specification
BYC5-600
FEATURES
⢠Extremely fast switching
⢠Low reverse recovery current
⢠Low thermal resistance
⢠Reduces switching losses in
associated MOSFET
SYMBOL
k
1
QUICK REFERENCE DATA
VR = 600 V
a
VF ⤠1.75 V
2
IF(AV) = 5 A
trr = 19 ns (typ)
APPLICATIONS
⢠Active power factor correction
⢠Half-bridge lighting ballasts
⢠Half-bridge/ full-bridge switched
mode power supplies.
The BYC5-600 is supplied in the
SOD59 (TO220AC) conventional
leaded package.
PINNING
PIN
DESCRIPTION
1 cathode
2 anode
tab cathode
SOD59 (TO220AC)
tab
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
Tstg
Tj
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average forward current
Repetitive peak forward current
Non-repetitive peak forward
current.
Storage temperature
Operating junction temperature
Tmb ⤠110 ËC
δ=
Tmb
0.5; with
⤠89 ËC1
reapplied
VRRM(max);
δ=
Tmb
0.5; with
⤠89 ËC1
reapplied
VRRM(max);
t = 10 ms
t = 8.3 ms
sinusoidal; Tj = 150ËC prior to surge
with reapplied VRWM(max)
MIN.
-
-
-
-
-
-
-
-40
-
MAX.
600
600
500
5
10
40
44
UNIT
V
V
V
A
A
A
A
150
ËC
150
ËC
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
in free air.
MIN.
-
-
TYP. MAX. UNIT
-
2.5 K/W
60
- K/W
September 1998
1
Rev 1.100
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