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BYC10-600_15 Datasheet, PDF (4/9 Pages) NXP Semiconductors – Hyperfast power diode
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NXP Semiconductors
BYC10-600
Hyperfast power diode
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
VF
forward voltage
IF = 10 A; Tj = 25 °C; Fig. 4
IF = 10 A; Tj = 150 °C; Fig. 4
IF = 20 A; Tj = 150 °C; Fig. 4
IR
reverse current
VR = 600 V; Tj = 25 °C; Fig. 5
VR = 500 V; Tj = 100 °C; Fig. 5
Dynamic characteristics
trr
reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs;
Tj = 25 °C; Fig. 6
IF = 10 A; VR = 400 V; dIF/dt = 500 A/
µs; Tj = 25 °C; Fig. 6
IF = 10 A; VR = 400 V; dIF/dt = 500 A/
µs; Tj = 100 °C; Fig. 6
IRM
peak reverse recovery IF = 10 A; VR = 400 V; dIF/dt = 100 A/
current
µs; Tj = 125 °C; Fig. 6
IF = 10 A; VR = 400 V; dIF/dt = 500 A/
µs; Tj = 125 °C; Fig. 6
VFRM
forward recovery
voltage
IF = 10 A; dIF/dt = 100 A/µs; Tj = 25 °C;
Fig. 7
Min Typ Max Unit
-
2
2.9 V
-
1.4 1.8 V
-
1.7 2.3 V
-
9
200 µA
-
1.1 3
mA
-
35
55
ns
-
19
-
ns
-
32
40
ns
-
3
7.5 A
-
9.5 12
A
-
8
11
V
BYC10-600
Product data sheet
All information provided in this document is subject to legal disclaimers.
27 May 2013
© NXP B.V. 2013. All rights reserved
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