BYC10-600_15 Datasheet, PDF (1/9 Pages) NXP Semiconductors – Hyperfast power diode

BYC10-600
Hyperfast power diode
27 May 2013
Product data sheet
1. General description
Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package
2. Features and benefits
• Extremely fast switching
• Low reverse recovery current
• Low thermal resistance
• Reduces switching losses in associated MOSFET
3. Applications
• Continuous Current Mode (CCM) Power Factor Correction (PFC)
• Half-bridge/full-bridge switched-mode power supplies
• Half-bridge lighting ballasts
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_RRM
repetitive peak reverse
voltage
I_F(AV)
average forward
current
δ = 0.5 ; T_mb ≤ 78 °C; square-wave
pulse; Fig. 1; Fig. 2
Static characteristics
V_F
forward voltage
I_F = 10 A; T_j = 150 °C; Fig. 4
Dynamic characteristics
t_rr
reverse recovery time I_F = 10 A; V_R = 400 V; dI_F/dt = 500 A/
µs; T_j = 25 °C; Fig. 6
Min Typ Max Unit
-
-
600 V
-
-
10
A
-
1.4 1.8 V
-
19
-
ns
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