BUK7528-55A Datasheet, PDF (4/9 Pages) NXP Semiconductors – TrenchMOS transistor standard level FET

Philips Semiconductors
TrenchMOS transistor
Standard level FET
Product specification
BUK7528-55A
BUK7628-55A
100 ^{ID / A}
18.0
90 16.0
80 ^12.0
11.5
70
60
50
40
30
20
10
0
0
2
10.5
9.5
10.0
9.0
11.0
8.5
8.0
VGS / V =
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4 VDS / V 6
8
10
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS); parameter V_GS
RDS(ON) / mOhm
70
65
6.0
VGS / V =
60
6.5
55
7.0
50
8.0
45
40
35
9.0
30
10.0
25
20
0
10 20 30 40 50 60 70 80 90
ID / A
Fig.6. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); parameter V_GS
RDS(ON) / mOhm
55
50
45
40
35
30
25
20
15
10
6
8
10
12
14
16
18
20
VGS / V
Fig.7. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(V_GS); conditions I_D = 25 A;
ID / A
100
90
80
70
60
50
40
30
Tj / ˚C =
175
20
10
25
0
0
2
4
6
8
10
12
VGS/V
Fig.8. Typical transfer characteristics.
I_D = f(V_GS) ; conditions: V_DS = 25 V; parameter T_j
gfs / S
16
14
12
10
8
6
4
2
0
0
10
20
30
40
50
60
70
80
ID / A
Fig.9. Typical transconductance, T_j = 25 ˚C.
g_fs = f(I_D); conditions: V_DS = 25 V
2.5 ^{Rds(on) normlised to 25degC}
2
1.5
1
0.5
-100
-50
0
50
100
150
200
Tmb / degC
Fig.10. Normalised drain-source on-state resistance.
a = R_DS(ON)/R_{DS(ON)25 ˚C} = f(T_j); I_D = 25 A; V_GS = 5 V
June 2000
4
Rev 1.100