BUK7528-55A Datasheet, PDF (3/9 Pages) NXP Semiconductors – TrenchMOS transistor standard level FET

Philips Semiconductors
TrenchMOS transistor
Standard level FET
Product specification
BUK7528-55A
BUK7628-55A
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
W_DSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I_D = 34 A; V_DD ≤ 25 V;
V_GS = 5 V; R_GS = 50 Ω; T_mb = 25 ˚C
MIN. TYP. MAX. UNIT
-
-
58 mJ
120 ^PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_mb)
ID%
120
110
100
Normalised Current Derating
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_mb); conditions: V_GS ≥ 5 V
1000 ^{ID / A}
RDS(on) = VDS/ ID
100
tp =
10us
100 us
10
D.C.
1 ms
10 ms
100 ms
1
1
10
100
1000
VDS / V
Fig.3. Safe operating area. T_mb = 25 ˚C
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
Zth / (K/W)
10
D=
1 ^0.5
0.2
0.1
0.1 0.05
PD
tp
D= ^tp
T
0.02
0
0.01
0.000001
0.0001
0.01
1
VDS / V
T
t
100
10000
Fig.4. Transient thermal impedance.
Z_{th j-mb} = f(t); parameter D = t_p/T
June 2000
3
Rev 1.100