BUK6507-75C_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel TrenchMOS FET

NXP Semiconductors
BUK6507-75C
N-channel TrenchMOS FET
120
I_D
(A)
100 ⁽¹⁾
80
003aae543
120
P_der
(%)
80
03aa16
60
40
40
20
0
0
50
100
150
200
T_mb (°C)
V_GS ≥ 10 V
(1) capped at 100 A due to package
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
10³
ID
(A)
10²
Limit RDSon = VDS / ID
003aae544
tp =10 μ s
100 μ s
10
DC
1 ms
1
10 ms
100 ms
10^-1
10^-1
1
10
10²
10³
V DS (V)
T_mb = 25°C; I_DM is a single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK6507-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 4 October 2010
© NXP B.V. 2010. All rights reserved.
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