BUK6507-75C_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS FET

BUK6507-75C
N-channel TrenchMOS FET
Rev. 02 — 4 October 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Suitable for intermediate level gate
drive sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V and 24 V Automotive systems
„ Electric and electro-hydraulic power
steering
„ Motors, lamps and solenoid control
„ Start-Stop micro-hybrid applications
„ Transmission control
„ Ultra high performance power
switching
1.4 Quick reference data
Table 1.
Symbol
V_DS
I_D
Quick reference data
Parameter
drain-source voltage
drain current
P_tot
total power dissipation
Static characteristics
R_DSon
drain-source on-state
resistance
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
V_GS = 10 V; T_mb = 25 °C;
see Figure 1
T_mb = 25 °C;
see Figure 2
Min Typ Max Unit
- - 75 V
[1] _-
-
100 A
- - 204 W
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C; see Figure 11
- 6.5 7.6 mΩ