BUK6226-75C_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel TrenchMOS FET

NXP Semiconductors
40
I_D
(A)
30
003aae859
20
10
0
0
50
100
150
200
T_mb (°C)
BUK6226-75C
N-channel TrenchMOS FET
120
P_der
(%)
80
03aa16
40
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
10³
I_D
(A)
10²
Limit R_DSon = V_DS/ I_D
10
1
10^-1
1
DC
10
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aae860
t_p =10 μ s
100 μ s
1 ms
10 ms
100 ms
10²
10³
V _DS(V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK6226-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 4 October 2010
© NXP B.V. 2010. All rights reserved.
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