BUK6226-75C_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS FET

BUK6226-75C
N-channel TrenchMOS FET
Rev. 01 — 4 October 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Suitable for standard and logic level
gate drive sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V and 24 V Automotive systems
„ Electric and electro-hydraulic power
steering
„ Motors, lamps and solenoid control
„ Start-Stop micro-hybrid applications
„ Transmission control
„ Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
V_GS = 10 V; T_mb = 25 °C;
see Figure 1
P_tot
total power dissipation T_mb = 25 °C; see Figure 2
Static characteristics
R_DSon
drain-source on-state
resistance
Avalanche ruggedness
V_GS = 10 V; I_D = 12 A;
T_j = 25 °C; see Figure 11
E_DS(AL)S
non-repetitive
drain-source avalanche
energy
Dynamic characteristics
I_D = 33 A; V_sup ≤ 75 V;
R_GS = 50 Ω; V_GS = 10 V;
T_j(init) = 25 °C; unclamped
Q_GD
gate-drain charge
I_D = 25 A; V_DS = 60 V;
V_GS = 10 V; see Figure 13;
see Figure 14
Min Typ Max Unit
-
-
75 V
-
-
33 A
-
-
80 W
-
24.5 29 mΩ
-
-
42 mJ
-
9.4 -
nC