BUK475-60H Datasheet, PDF (4/7 Pages) NXP Semiconductors – PowerMOS transistor Isolated version of BUK455-60H

Philips Semiconductors
PowerMOS transistor
Product specification
BUK475-60H
ID / A
100
15
10
9
20
80
BUK4Y5-60H
VGS / V = 8
60
7
6.5
40
6
5.5
20
5
4
0
0
2
4
6
8
10
VDS / V
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS); parameter V_GS
RDS(ON) / Ohm
0.2
4.5 5 5.5 6 6.5
7
0.15
BUK4Y5-60H
VGS / V = 8
0.1
0.05
10 ₉
15
0
0
20
40
60
80
100
ID / A
Fig.6. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); parameter V_GS
ID / A
100
BUK4Y5-60H
80
60
40
20
Tj / C =
-40
25
150
0
0
2
4
6
8
10
12
VGS / V
Fig.7. Typical transfer characteristics.
I_D = f(V_GS) ; conditions: V_DS = 25 V; parameter T_j
gfs / S
30
BUK4Y5-60H
25
20
15
10
Tj / C =
5
-40
25
150
0
0
20
40
60
80
100
ID / A
Fig.8. Typical transconductance, T_j = 25 ˚C.
g_fs = f(I_D); conditions: V_DS = 10 V
a
1.5
Normalised RDS(ON) = f(Tj)
1.0
0.5
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.9. Normalised drain-source on-state resistance.
a = R_DS(ON)/R_{DS(ON)25 ˚C} = f(T_j); I_D = 20 A; V_GS = 5 V
VGS(TO) / V
4
3
2
max.
typ.
min.
1
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.10. Gate threshold voltage.
V_GS(TO) = f(T_j); conditions: I_D = 1 mA; V_DS = V_GS
November 1996
4
Rev 1.200