BUK475-60H Datasheet, PDF (1/7 Pages) NXP Semiconductors – PowerMOS transistor Isolated version of BUK455-60H

Philips Semiconductors
PowerMOS transistor
Isolated version of BUK455-60H
Product specification
BUK475-60H
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic full-pack envelope. The device
is intended for use in Automotive
applications, Switched Mode Power
Supplies (SMPS), motor control,
welding, DC/DC and AC/DC
converters, and in general purpose
switching applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V_DS
I_D
P_tot
T_j
R_DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
MAX.
60
22.5
30
150
34
PINNING - SOT186A
PIN
DESCRIPTION
1 gate
2 drain
3 source
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
d
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_DS
V_DGR
±V_GS
I_D
I_D
I_DM
P_tot
T_stg
T_j
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction temperature
-
R_GS = 20 kΩ
-
T_hs = 25 ˚C
T_hs = 100 ˚C
T_hs = 25 ˚C
T_hs = 25 ˚C
-
-
MIN.
-
-
-
-
-
-
-
- 55
-
THERMAL RESISTANCES
SYMBOL
R_{th j-hs}
R_{th j-a}
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
TYP.
-
55
MAX.
60
60
30
22.5
14
90
30
150
150
MAX.
4.17
-
UNIT
V
A
W
˚C
mΩ
UNIT
V
V
V
A
A
A
W
˚C
˚C
UNIT
K/W
K/W
November 1996
1
Rev 1.200