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BUK109-50DL Datasheet, PDF (4/10 Pages) NXP Semiconductors – PowerMOS transistor Logic level TOPFET
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Philips Semiconductors
PowerMOS transistor
Logic level TOPFET
Product specification
BUK109-50DL
INPUT CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified. The supply for the logic and overload protection is taken from the input.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VIS(TO)
IIS
VISR
IISL
V(BR)IS
RIG
Input threshold voltage
Input supply current
Protection reset voltage1
Input supply current
Input breakdown voltage
Input series resistance
to gate of power MOSFET
VDS = 5 V; ID = 1 mA
1.0 1.5 2.0 V
normal operation;
VIS = 5 V
100 200 350 µA
VIS = 4 V
-
160 270 µA
Tj = 25 ˚C
2.0 2.6 3.5
V
Tj = 150 ˚C 1.0
-
-
protection latched;
II = 10 mA
VIS = 5 V
-
VIS = 3.5 V
-
6
Tj = 25 ˚C
-
Tj = 150 ˚C -
330 650 µA
240 430 µA
-
-
V
33
-
kΩ
50
-
kΩ
SWITCHING CHARACTERISTICS
Tmb = 25 ˚C. RI = 50 Ω . Refer to waveform figure and test circuit.
SYMBOL PARAMETER
CONDITIONS
td on
Turn-on delay time
tr
Rise time
td off
Turn-off delay time
tf
Fall time
VDD = 13 V; VIS = 5 V
resistive load RL = 2.1 Ω
VDD = 13 V; VIS = 0 V
resistive load RL = 2.1 Ω
MIN.
-
-
-
-
TYP.
17
75
60
70
MAX.
-
-
-
-
UNIT
µs
µs
µs
µs
REVERSE DIODE LIMITING VALUE
SYMBOL PARAMETER
IS
Continuous forward current
CONDITIONS
Tmb ≤ 25 ˚C; VIS = 0 V
MIN.
-
MAX.
26
UNIT
A
REVERSE DIODE CHARACTERISTICS
Tmb = 25 ˚C
SYMBOL PARAMETER
CONDITIONS
VSDO
trr
Forward voltage
Reverse recovery time
IS = 26 A; VIS = 0 V; tp = 300 µs
not applicable2
MIN.
-
-
TYP. MAX. UNIT
1.0 1.5 V
-
-
-
ENVELOPE CHARACTERISTICS
SYMBOL PARAMETER
Ld
Internal drain inductance
Ls
Internal source inductance
CONDITIONS
Measured from upper edge of tab
to centre of die
Measured from source lead
soldering point to source bond pad
MIN. TYP. MAX. UNIT
-
2.5
-
nH
-
7.5
-
nH
1 The input voltage below which the overload protection circuits will be reset.
2 The reverse diode of this type is not intended for applications requiring fast reverse recovery.
June 1996
4
Rev 1.000
 ▷