BUK109-50DL Datasheet, PDF (2/10 Pages) NXP Semiconductors – PowerMOS transistor Logic level TOPFET

Philips Semiconductors
PowerMOS transistor
Logic level TOPFET
Product specification
BUK109-50DL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_DS
Continuous drain source voltage¹
-
V_IS
Continuous input voltage
-
I_D
Continuous drain current
T_mb ≤ 25 ˚C; V_IS = 5 V
I_D
Continuous drain current
T_mb ≤ 100 ˚C; V_IS = 5 V
I_DRM
Repetitive peak on-state drain current T_mb ≤ 25 ˚C; V_IS = 5 V
P_D
Total power dissipation
T_mb ≤ 25 ˚C
T_stg
Storage temperature
-
T_j
Continuous junction temperature²
normal operation
T_sold
Lead temperature
during soldering
MIN.
-
0
-
-
-
-
-55
-
-
MAX.
50
6
26
16
100
75
150
150
250
UNIT
V
V
A
A
A
W
˚C
˚C
˚C
OVERLOAD PROTECTION LIMITING VALUES
With the protection supply provided via the input pin, TOPFET can protect itself from two types of overload.
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
V_ISP
Protection supply voltage³
Over temperature protection
for valid protection
4
-
V
V_DDP(T)
V_DDP(P)
P_DSM
Protected drain source supply voltage
Short circuit load protection⁴
Protected drain source supply
voltage⁵
Instantaneous overload dissipation
V_IS = 5 V
V_IS = 5 V
T_mb = 25 ˚C
-
50
V
-
20
V
-
1.3
kW
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
I_DROM
E_DSM
E_DRM
Repetitive peak clamping current
Non-repetitive clamping energy
Repetitive clamping energy
V_IS = 0 V
T_mb ≤ 25 ˚C; I_DM = 26 A;
V_DD ≤ 20 V; inductive load
T_mb ≤ 95 ˚C; I_DM = 8 A;
V_DD ≤ 20 V; f = 250 Hz
-
26
A
-
625
mJ
-
40
mJ
ESD LIMITING VALUE
SYMBOL PARAMETER
V_C
Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
-
MAX.
2
UNIT
kV
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 A higher T_j is allowed as an overload condition but at the threshold T_j(TO) the over temperature trip operates to protect the switch.
3 The input voltage for which the overload protection circuits are functional.
4 For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS.
5 The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for
P_DSM, which is always the case when V_DS is less than V_DDP(P) maximum.
June 1996
2
Rev 1.000