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BU505 Datasheet, PDF (4/12 Pages) NXP Semiconductors – Silicon diffused power transistors
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Philips Semiconductors
Silicon diffused power transistors
Product specification
BU505; BU505D
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VCEOsust
VCEsat
VBEsat
VEBO
VF
ICES
IEBO
hFE
fT
Cc
PARAMETER
CONDITIONS
collector-emitter sustaining voltage see Figs 5 and 6
collector-emitter saturation voltage
base-emitter saturation voltage
emitter-base voltage
diode forward voltage (BU505D)
collector-emitter cut-off current
IC = 2 A; IB = 900 mA
IC = 2 A; IB = 900 mA
IE = 10 mA; IC = 0
IF = 2 A
VCE = VCESmax; VBE = 0;
note 1
emitter-base cut-off current
DC current gain
transition frequency
VCE = VCESmax; VBE = 0;
Tj = 125 °C; note 1
VEB = 5 V; IC = 0
VCE = 5 V; IC = 100 mA
VCE = 5 V; IC = 100 mA;
f = 5 MHz
collector capacitance
VCB = 10 V; IE = ie = 0;
f = 1 MHz
MIN.
700
−
−
−
−
−
−
−
6
−
−
Switching times in horizontal deflection circuit (see Fig.7)
ts
storage time
tf
fall time
ICM = 2 A; IB(end) = 900 mA;
Vdr = −4 V
LB = 10 µH
−
LB = 15 µH
−
LB = 25 µH
−
ICM = 2 A; IB(end) = 900 mA;
Vdr = −4 V
LB = 10 µH
−
LB = 15 µH
−
LB = 25 µH
−
Note
1. Measured with a half-sinewave voltage (curve tracer).
TYP.
−
−
−
6
−
−
−
−
13
7
65
6.5
7.5
9.5
0.9
0.9
0.85
MAX.
−
1
1.3
−
1.8
0.15
1
1
30
−
−
−
−
−
−
−
−
UNIT
V
V
V
V
V
mA
mA
mA
MHz
pF
µs
µs
µs
µs
µs
µs
1997 Aug 13
4
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