BU505 Datasheet, PDF (3/12 Pages) NXP Semiconductors – Silicon diffused power transistors

Philips Semiconductors
Silicon diffused power transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CESM
V_CEO
I_Csat
I_C
I_CM
I_B
I_BM
P_tot
T_stg
T_j
collector-emitter peak voltage
collector-emitter voltage
collector saturation current
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
storage temperature
junction temperature
V_BE = 0
open base
see Fig.3
see Fig.3
T_mb ≤ 25 °C; see Fig.4
Product specification
BU505; BU505D
MIN.
−
−
−
−
−
−
−
−
−65
−
MAX.
1 500
700
2
2.5
4
2
4
75
+150
150
UNIT
V
V
A
A
A
A
A
W
°C
°C
10
handbook, full pagewidth
Zth _j−mb
(K/W)
1
δ=1
0.75
0.50
0.33
0.20
0.10
0.05
10^−1
0.02
0.01
0
MGB859
10^−2
10^−2
10^−1
1
10
Fig.2 Transient thermal impedance.
tp (ms)
10²
1997 Aug 13
3