BU4508AZ Datasheet, PDF (4/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4508AZ
100 ^hFE
VCE = 5V
10
Ths = 25 C
Ths = 85 C
1
0.001
0.01
0.1
1
10
IC / A
Fig.7. High and low DC current gain.
VCEsat / V
10
Ths = 25 C
Ths = 85 C
1
0.1
BU4508AF/X/Z
IC/IB = 5
0.01
0.1
1
10
IC / A 100
Fig.8. Typical collector-emitter saturation voltage.
1.2 ^{VBEsat / V}
1.1
1
IC = 5 A
BU4508AF/X/Z
Ths = 25 C
Ths = 85 C
0.9
0.8
IC = 4 A
0.7
0.6
0
0.5
1
1.5
2
2.5 IB / A 3
Fig.9. Typical base-emitter saturation voltage.
ts/tf / us
10
8
6
ICsat = 5 A
Ths = 85 C
Freq = 16 kHz
ts
4
2
tf
0
0
0.5
1
1.5
2
2.5 IB / A 3
Fig.10. Typical collector storage and fall time.
I_C =5 A; T_j = 85˚C; f = 16kHz
120 ^PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.11. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25˚C}
Zth K/W
10
0.5
1
0.2
0.1
0.05
0.1
0.02
BU4508AZ
0.01
P_D
tp
D
=
tp
T
0
0.001
1.0E-07
1.0E-05
1.0E-03
t/s
T
t
1.0E-01
1.0E+01
Fig.12. Transient thermal impedance.
May 1998
4
Rev 1.000