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| BU4508AZ Datasheet, PDF (2/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4508AZ
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
waveform;
heatsink
R.H. ⤠65% ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
2500 V
-
10
-
pF
STATIC CHARACTERISTICS
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
ICES
Collector cut-off current 2
ICES
IEBO
BVEBO
VCEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
hFE
Collector-emitter saturation voltages
Base-emitter saturation voltage
DC current gain
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ËC
VEB = 6.0 V; IC = 0 A
IB = 1 mA
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 5.0 A; IB = 1.25 A
IC = 5.0 A; IB = 1.25 A
IC = 100 mA; VCE = 5 V
IC = 5.0 A; VCE = 5 V
MIN.
-
-
-
7.5
800
-
0.85
-
4.2
TYP. MAX. UNIT
-
1.0 mA
-
2.0 mA
-
100 µA
13.5 -
V
-
-
V
-
3.0
V
0.94 1.03 V
12
-
5.7 7.3
DYNAMIC CHARACTERISTICS
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
Cc
Collector capacitance
Switching times (16 kHz line
deflection circuit)
ts
Turn-off storage time
tf
Turn-off fall time
Switching times (64 kHz line
deflection circuit)
ts
Turn-off storage time
tf
Turn-off fall time
CONDITIONS
IE = 0 A; VCB = 10 V; f = 1 MHz
ICsat = 5.0 A; IB1 = 1.0 A; (IB2 = -2.5 A)
TYP. MAX. UNIT
80
-
pF
3.2 4.3 µs
0.35 0.48 µs
ICsat = 4.0 A; IB1 = 0.8 A; (IB2 = -2.0 A)
1.9
-
µs
0.17 -
µs
2 Measured with half sine-wave voltage (curve tracer).
May 1998
2
Rev 1.000
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