BU4507AX Datasheet, PDF (4/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4507AX
hFE
100
VCE = 5V
10
BU4507AF
Ths = 25 C
Ths = 85 C
VCEsat / V
10
Ths = 25 C
Ths = 85 C
1
0.1
BU4507AF/X/Z
IC/IB = 5
1
0.001
0.01
0.1
1 _{IC / A}
10
Fig.7. High and low DC current gain.
0.01
0.1
1
10
IC / A 100
Fig.10. Typical collector-emitter saturation voltage.
VCC
IBend
-VBB
LC
LB
T.U.T.
Fig.8. Test Circuit RBSOA.
VCL
CFB
IC / A
30
BU2507
20
10
0
100
1000 1500
VCE / V
Fig.9. Reverse bias safe operating area. T_j ≤ T_jmax
VBEsat / V
1.2
1.1
BU4507AF/X/Z
Ths = 25 C
Ths = 85 C
1
0.9
0.8
IC = 4 A
0.7
0.6
0
0.5
1
1.5
2
2.5 IB / A 3
Fig.11. Typical base-emitter saturation voltage.
ts/tf / us
10
8
6
ICsat = 4 A
Ths = 85 C
Freq = 16 kHz
ts
4
2
tf
0
0
0.5
1
1.5
2
2.5 IB / A 3
Fig.12. Typical collector storage and fall time.
I_C =4 A; T_j = 85˚C; f = 16kHz
August 1998
4
Rev 1.100