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| BU4507AX Datasheet, PDF (2/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4507AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol
Repetitive peak voltage from all R.H. ⤠65 % ; clean and dustfree
three terminals to external
heatsink
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
- 2500 V
-
22
-
pF
STATIC CHARACTERISTICS
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
ICES
Collector cut-off current 2
ICES
IEBO
VCEOsust
Emitter cut-off current
Collector-emitter sustaining voltage
BVEBO
VCEsat
VBEsat
hFE
hFE
Emitter-base breakdown voltage
Collector-emitter saturation voltages
Base-emitter saturation voltage
DC current gain
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax
Tj = 125 ËC
VEB = 6 V; IC = 0 A
IB = 0 A; IC = 100 mA;
L = 25 mH
IB = 1 mA
IC = 4 A; IB = 1 A
IC = 4 A; IB = 1 A
IC = 100 mA; VCE = 5 V
IC = 4 A; VCE = 5 V
MIN.
-
-
-
800
7.5
-
0.84
-
4.2
TYP. MAX. UNIT
-
1.0 mA
-
2.0 mA
-
100 µA
-
-
V
13.5 -
V
-
3.0
V
0.92 1.01 V
12
-
5.7 7.3
DYNAMIC CHARACTERISTICS
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
Cc
Collector capacitance
Switching times (16 kHz line
deflection circuit)
ts
Turn-off storage time
tf
Turn-off fall time
Switching times (56 kHz line
deflection circuit)
ts
Turn-off storage time
tf
Turn-off fall time
CONDITIONS
IE = 0 A; VCB = 10 V; f = 1 MHz
ICsat = 4.0 A;IB1 = 0.8 A
(IB2 = -2.0 A)
ICsat = 4.0 A;IB1 = 0.8 A
(IB2 = -2.1 A)
TYP. MAX. UNIT
68
-
pF
3.8 4.6 µs
0.30 0.45 µs
2.4
-
µs
0.21 -
µs
2 Measured with half sine-wave voltage (curve tracer).
August 1998
2
Rev 1.100
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