BU2708DX Datasheet, PDF (4/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2708DX
hFE
100
VCE = 1 V
10
BU2708DF
Ths = 25 C
Ths = 85 C
PTOT / W
10
IC = 3.5 A
f = 16 kHz
Tj = 85 C
BU2708AF/DF
1
0.01
0.1
1
10 _{IC / A} 100
Fig.5. DC current gain. h_FE = f (I_C)
Parameter T_hs
(Low and high gain)
1
0
0.5
1
1.5
2
IB / A
Fig.8. Limit P_tot; T_j = 85˚C
P_tot = f (I_B(end)); I_C = 3.5 A; f = 16 kHz
VCEsat / V
10
Tj = 85 C
Tj = 25 C
1
IC/IB = 8
0.1
BU2708DF
IC/IB = 4
PTOT / W
10
IC = 4 A
f = 16 kHz
Tj = 85 C
BU2708AF/DF
0.01
0.1
1
10
100
IC / A
Fig.6. Typical collector-emitter saturation voltage.
V_CEsat = f (I_C); parameter I_C/I_B
VBEsat / V
1.2
1.1
Tj = 85 C
Tj = 25 C
1
BU2708DF
IC = 4A
0.9
0.8
3A
0.7
0.6
0
Fig.7.
0.5
1
1.5
2
IB / A
Typical base-emitter saturation voltage.
V_BEsat = f (I_B); parameter I_C
1
0
0.5
1
1.5
2
IB / A
Fig.9. Limit P_tot; T_j = 85˚C
P_tot = f (I_B(end)); I_C = 4.0 A; f = 16 kHz
ts/tf / us
10
BU2708AF/DF
8
6
4
IC = 4A
IC = 3.5A
2
0
0
0.5
1
1.5
2
IB / A
Fig.10. Limit storage and fall time.
t_s = f (I_B); tf = f (I_B); parameter I_C; T_j = 85˚C; f = 16 kHz
September 1997
4
Rev 1.200