BU2708DX Datasheet, PDF (2/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2708DX
THERMAL RESISTANCES
SYMBOL
R_{th j-hs}
R_{th j-hs}
R_{th j-a}
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
CONDITIONS
without heatsink compound
with heatsink compound
in free air
TYP.
-
-
35
MAX.
3.7
2.8
-
UNIT
K/W
K/W
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_isol
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree
three terminals to external
heatsink
C_isol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
2500 V
-
22
-
pF
STATIC CHARACTERISTICS
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
I_CES
Collector cut-off current ²
I_CES
BV_EBO
R_BE
V_CEsat
V_BEsat
V_F
h_FE
h_FE
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Diode forward voltage
DC current gain
CONDITIONS
V_BE = 0 V; V_CE = V_CESMmax
V_BE = 0 V; V_CE = V_CESMmax;
T_j = 125 ˚C
I_B = 600 mA
V_EB = 7.5 V
I_C = 4 A; I_B = 1.33 A
I_C = 4 A; I_B = 1.33 A
I_F = 4 A
I_C = 1 A; V_CE = 5 V
I_C = 4 A; V_CE = 1 V
MIN.
-
-
7.5
-
0.83
-
3
TYP. MAX. UNIT
-
1.0 mA
-
2.0 mA
13.5 -
V
45
Ω
-
1.0
V
0.91 1.00 V
1.6
V
15
-
6
7.3
DYNAMIC CHARACTERISTICS
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Switching times (line deflection
circuit 16 kHz)
t_s
Turn-off storage time
t_f
Turn-off fall time
CONDITIONS
I_Csat = 4 A; L_C = 1 mH; C_FB = 12.2 nF;
V_CC = 120 V; I_B(end) = 0.8 A; L_B = 6 µH;
-V_BB = 4 V; -I_BM = I_CM/2
TYP.
4.8
0.4
MAX. UNIT
5.5 µs
0.52 µs
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.200