BU2532AL Datasheet, PDF (4/6 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2532AL
Zth / K/W
10
BU2530AL/32AL
1
0.5
0.1
0.01
0.2
0.1
0.05
0.02
P_D
tp
D
=
tp
T
T
t
D=0
0.001
1.0E-06
1E-04
1E-02
1E+00
t/s
Fig.9. Transient thermal impedance.
Z_{th j-mb} = f(t); parameter D = t_p/T
VCC
IC / A
40
BU2530/32AL
30
Area where
fails occur
20
10
0
100
VCE / V
1000 1500
Fig.11. Reverse bias safe operating area. T_j ≤ T_jmax
IBend
-VBB
LC
LB
T.U.T.
VCL
CFB
Fig.10. Test Circuit RBSOA. V_CC = 150 V;
-V_BB = 1 - 5 V;
L_C = 1.5 mH; V_CL = 1450 V; L_B = 0.3 - 2 µH;
C_FB = 1 - 10 nF; I_B(end) = 1.0 - 2.0 A
September 1997
4
Rev 1.100