BU2532AL Datasheet, PDF (3/6 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2532AL
+ 150 v nominal
adjust for ICsat
Lc
IBend
-VBB
LB
T.U.T.
Cfb
Fig.3. Switching times test circuit.
hFE
100
VCE = 1 V
10
BU2530/2AL
Tj = 85 C
Tj = 25 C
1
0.01
0.1
1
10
100
IC / A
Fig.4. High and low DC current gain. h_FE = f (I_C)
V_CE = 1 V
hFE
100
VCE = 5 V
BU2530/2AL
Tj = 85 C
Tj = 25 C
10
1
0.01
0.1
1
10
100
IC / A
Fig.5. High and low DC current gain. h_FE = f (I_C)
V_CE = 5 V
VCEsat / V
10
Tj = 85 C
Tj = 25 C
1
IC/IB = 10
0.1
BU2530/2AL
IC/IB = 5
0.01
0.1
1
10
100
IC / A
Fig.6. Typical collector-emitter saturation voltage.
V_CEsat = f (I_C); parameter I_C/I_B
VBEsat / V
1
IC = 9 A
0.9
BU2530/2AL
0.8
IC = 7 A
0.7
Tj = 85 C
Tj = 25 C
0.6
0
1
2
3
4
IB / A
Fig.7. Typical base-emitter saturation voltage.
V_BEsat = f (I_B); parameter I_C
120 ^PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.8. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25˚C} = f (T_mb)
September 1997
3
Rev 1.100