BTA225 Datasheet, PDF (4/8 Pages) NXP Semiconductors – Three quadrant triacs high commutation

Philips Semiconductors
Three quadrant triacs
high commutation
Product specification
BTA225 series B
40 ^{Ptot / W}
30
20
10
BTA140
1
Tmb(max) / C
85
= 180
120
95
90
60
30
105
115
0
125
0
5
10
15
20
25
30
IT(RMS) / A
Fig.1. Maximum on-state dissipation, P_tot, versus rms
on-state current, I_T(RMS), where α = conduction angle.
1000 ^{ITSM / A}
BTA225
dI_T/dt limit
100
IT
ITSM
T
time
10
10us
100us
Tj initial = 25 C max
1ms
10ms
100ms
T/s
Fig.2. Maximum permissible non-repetitive peak
on-state current I_TSM, versus pulse width t_p, for
sinusoidal currents, t_p ≤ 20ms.
200 ^{ITSM / A}
150
100
BTA140
IT
ITSM
T
time
Tj initial = 25 C max
50
01
10
100
1000
Number of cycles at 50Hz
Fig.3. Maximum permissible non-repetitive peak
on-state current I_TSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
IT(RMS) / A
30
25
BTA140
91 C
20
15
10
5
0-50
0
50
100
150
Tmb / C
Fig.4. Maximum permissible rms current I_T(RMS) ,
versus mounting base temperature T_mb.
50 ^{IT(RMS) / A}
BTA140
40
30
20
10
0
0.01
0.1
1
10
surge duration / s
Fig.5. Maximum permissible repetitive rms on-state
current I_T(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; T_mb ≤ 91˚C.
VGT(Tj)
1.6 ^{VGT(25 C)}
BT136
1.4
1.2
1
0.8
0.6
0.4
-50
0
50
100
150
Tj / C
Fig.6. Normalised gate trigger voltage
V_GT(T_j)/ V_GT(25˚C), versus junction temperature T_j.
September 1997
4
Rev 1.200