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| BTA225 Datasheet, PDF (3/8 Pages) NXP Semiconductors – Three quadrant triacs high commutation | |||
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Philips Semiconductors
Three quadrant triacs
high commutation
Product speciï¬cation
BTA225 series B
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
Rth j-mb
Rth j-a
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
in free air
junction to ambient
MIN.
-
-
-
TYP.
-
-
60
MAX.
1.0
1.4
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 ËC unless otherwise stated
SYMBOL PARAMETER
IGT
Gate trigger current2
IL
Latching current
IH
Holding current
VT
On-state voltage
VGT
Gate trigger voltage
ID
Off-state leakage current
CONDITIONS
VD = 12 V; IT = 0.1 A
T2+ G+
T2+ G-
T2- G-
VD = 12 V; IGT = 0.1 A
T2+ G+
T2+ G-
T2- G-
VD = 12 V; IGT = 0.1 A
IT = 30 A
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A; Tj = 125 ËC
VD = VDRM(max); Tj = 125 ËC
MIN. TYP. MAX. UNIT
2
18 50 mA
2
21 50 mA
2
34 50 mA
-
31 60 mA
-
34 90 mA
-
30 60 mA
-
31 60 mA
-
1.3 1.55 V
-
0.7 1.5 V
0.25 0.4
-
V
-
0.1 0.5 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ËC unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
dVD/dt
dIcom/dt
tgt
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Gate controlled turn-on
time
VDM = 67% VDRM(max); Tj = 125 ËC;
exponential waveform; gate open circuit
VDM = 400 V; Tj = 125 ËC; IT(RMS) = 25 A;
without snubber; gate open circuit
ITM = 30 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/µs
MIN. TYP. MAX. UNIT
1000 4000 - V/µs
-
44
- A/ms
-
2
-
µs
2 Device does not trigger in the T2-, G+ quadrant.
September 1997
3
Rev 1.200
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