BTA204WD Datasheet, PDF (4/8 Pages) NXP Semiconductors – BTA204W series D, E and F Three quadrant triacs guaranteed commutation

Philips Semiconductors
Three quadrant triacs
guaranteed commutation
Product specification
BTA204W series D, E and F
1.4 ^{Ptot / W}
BT134W
Tsp(max) / C ₁₀₄
1.2
1
1
0.8
0.6
0.4
107
= 180
120
110
90
113
60
30
116
119
0.2
122
0
125
0
0.2
0.4
0.6
0.8
1
1.2
IT(RMS) / A
Fig.1. Maximum on-state dissipation, P_tot, versus rms
on-state current, I_T(RMS), where α = conduction angle.
ITSM / A
1000
100
dI_T/dt limit
BT134W
IT
ITSM
T
time
Tj initial = 25 C max
T2- G+ quadrant
10
1
10us
100us
1ms
10ms
100ms
T/s
Fig.2. Maximum permissible non-repetitive peak
on-state current I_TSM, versus pulse width t_p, for
sinusoidal currents, t_p ≤ 20ms.
12 ^{ITSM / A}
10
8
6
BT134W
IT
ITSM
T
time
Tj initial = 25 C max
4
2
01
10
100
1000
Number of cycles at 50Hz
Fig.3. Maximum permissible non-repetitive peak
on-state current I_TSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
1.2 ^{IT(RMS) / A}
1
BT134W
108 C
0.8
0.6
0.4
0.2
0-50
0
50
100
150
Tsp / C
Fig.4. Maximum permissible rms current I_T(RMS) ,
versus solder point temperature T_sp.
IT(RMS) / A
2
BT134W
1.5
1
0.5
00.01
0.1
1
10
surge duration / s
Fig.5. Maximum permissible repetitive rms on-state
current I_T(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; T_sp ≤ 108˚C.
VGT(Tj)
1.6 ^{VGT(25 C)}
BT136
1.4
1.2
1
0.8
0.6
0.4
-50
0
50
100
150
Tj / C
Fig.6. Normalised gate trigger voltage
V_GT(T_j)/ V_GT(25˚C), versus junction temperature T_j.
December 1998
4
Rev 1.000