BTA204WD Datasheet, PDF (3/8 Pages) NXP Semiconductors – BTA204W series D, E and F Three quadrant triacs guaranteed commutation

Philips Semiconductors
Three quadrant triacs
guaranteed commutation
Product specification
BTA204W series D, E and F
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-sp}
R_{th j-a}
Thermal resistance
junction to solder point
Thermal resistance
junction to ambient
CONDITIONS
full or half cycle
pcb mounted; minimum footprint
pcb mounted; pad area as in fig:2
MIN. TYP. MAX. UNIT
-
-
15 K/W
- 156 - K/W
-
70
- K/W
STATIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP.
MAX.
UNIT
BTA204W-
...D ...E ...F
I_GT
Gate trigger current²
V_D = 12 V; I_T = 0.1 A
T2+ G+
-
-
5
10 25 mA
T2+ G-
-
-
5
10 25 mA
T2- G-
-
-
5
10 25 mA
I_L
Latching current
V_D = 12 V; I_GT = 0.1 A
T2+ G+
-
-
6
12 20 mA
T2+ G-
-
-
9
18 30 mA
T2- G-
-
-
6
12 20 mA
I_H
Holding current
V_D = 12 V; I_GT = 0.1 A
-
-
6
12 20 mA
V_T
On-state voltage
I_T = 2 A
-
1.2
1.5
V
V_GT
Gate trigger voltage
V_D = 12 V; I_T = 0.1 A
-
0.7
1.5
V
V_D = 400 V; I_T = 0.1 A;
0.25 0.4
-
V
T_j = 125 ˚C
I_D
Off-state leakage current V_D = V_DRM(max);
-
0.1
0.5
mA
T_j = 125 ˚C
DYNAMIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
BTA204W- ...D ...E ...F
dV_D/dt
Critical rate of rise of
off-state voltage
V_DM = 67% V_DRM(max);
20
T_j = 125 ˚C; exponential
waveform; gate open
30 50
-
circuit
dI_com/dt Critical rate of change of V_DM = 400 V; T_j = 125 ˚C; 1.0 2.0 2.5
-
commutating current
I_T(RMS) = 1 A;
dV_com/dt = 20V/µs; gate
open circuit
dI_com/dt Critical rate of change of V_DM = 400 V; T_j = 125 ˚C; 5.0
-
-
-
commutating current
I_T(RMS) = 1 A;
dV_com/dt = 0.1V/µs; gate
open circuit
t_gt
Gate controlled turn-on I_TM = 12 A; V_D = V_DRM(max); -
-
-
2
time
I_G = 0.1 A; dI_G/dt = 5 A/µs
- V/µs
- A/ms
- A/ms
-
µs
2 Device does not trigger in the T2-, G+ quadrant.
December 1998
3
Rev 1.000