English
Language : 

BLF645_15 Datasheet, PDF (4/13 Pages) NXP Semiconductors – Broadband power LDMOS transistor
◁
NXP Semiconductors
BLF645
Broadband power LDMOS transistor
8. Test information
8.1 RF performance
The following figures are measured in a class-AB production test circuit.
8.1.1 1-Tone CW
20
Gp
(dB)
19
18
17
16
15
14
13
0
Gp
ηD
40
80
001aal361
70
ηD
(%)
60
50
40
30
20
10
0
120
160
PL (W)
20
Gp
(dB)
19
18
17
16
15
14
13
12
0
001aal362
(7)
(6)
(5)
(4)
(3)
(2)
(1)
40
80
120
160
PL (W)
VDS = 32 V; IDq = 900 mA (for total device);
f = 1300 MHz.
Fig 1. Power gain and drain efficiency as function of
load power; typical values
VDS = 32 V; f = 1300 MHz.
(1) IDq = 200 mA (for total device).
(2) IDq = 400 mA (for total device).
(3) IDq = 600 mA (for total device).
(4) IDq = 900 mA (for total device).
(5) IDq = 1200 mA (for total device).
(6) IDq = 1400 mA (for total device).
(7) IDq = 1800 mA (for total device).
Fig 2. Power gain as a function of load power;
typical values
BLF645_1
Product data sheet
Rev. 01 — 27 January 2010
© NXP B.V. 2010. All rights reserved.
4 of 13
 ▷