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BLF645_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – Broadband power LDMOS transistor | |||
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BLF645
Broadband power LDMOS transistor
Rev. 01 â 27 January 2010
Product data sheet
1. Product profile
1.1 General description
A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial
applications. The transistor is suitable for the frequency range HF to 1400 MHz. The
excellent ruggedness and broadband performance of this device makes it ideal for digital
applications.
Table 1. Typical performance
RF performance at Th = 25 °C in a common source test circuit.
Mode of operation f
VDS PL
PL(PEP)
(MHz)
(V) (W) (W)
CW, class-AB
1300
32 100 -
2-tone, class-AB
1300
32 -
100
Gp
(dB)
18
18
ηD
IMD
(%) (dBc)
56
-
45
â32
1.2 Features
 CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent
drain current IDq = 0.9 A for total device:
 Average output power = 100 W
 Power gain = 18 dB
 Drain efficiency = 56 %
 2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent
drain current IDq = 0.9 A for total device:
 Peak envelope load power = 100 W
 Power gain = 18 dB
 Drain efficiency = 45 %
 Intermodulation distortion = â32 dBc
 Integrated ESD protection
 Excellent ruggedness
 High power gain
 High efficiency
 Excellent reliability
 Easy power control
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
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