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| BLF25M612_15 Datasheet, PDF (4/11 Pages) NXP Semiconductors – Power LDMOS transistor | |||
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NXP Semiconductors
BLF25M612; BLF25M612G
Power LDMOS transistor
7.2 Impedance information
Table 8. Typical impedance
Measured load-pull data. Typical values unless otherwise specified.
f
ZS
ZL
(MHz)
(ï)
(ï)
2400
3.0 ï 11.4j
4.17 ï 3.3j
2450
3.7 ï 11.4j
4.3 ï 2.7j
2500
3.8 ï 11.4j
4.7 ï 4.6j
gate
ZS
Fig 1. Definition of transistor impedance
drain
ZL
001aaf059
7.3 Test circuit
&
&
5
&
&
&
&
&
&
&
%/)0
%/)0
DDD
Fig 2.
Printed-Circuit Board (PCB): Rogers 4350B; ï¥r = 3.5; thickness = 0.508 mm;
thickness copper plating = 35 ïm
See Table 9 for a list of components.
Component layout
BLF25M612_BLF25M612G
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 â 16 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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