BLF25M612_15 Datasheet, PDF (1/11 Pages) NXP Semiconductors – Power LDMOS transistor

BLF25M612; BLF25M612G
Power LDMOS transistor
Rev. 3 — 16 December 2014
Product data sheet
1. Product profile
1.1 General description
12 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at
frequencies from 2400 MHz to 2500 MHz.
The BLF25M612 and BLF25M612G are drivers designed for high power CW applications
and is assembled in a high performance ceramic package.
Table 1. Typical performance
RF performance at T_case = 25 C in a common source class-AB production test circuit.
Test signal
f
V_DS
P_L(AV)
G_p
_D
(MHz)
(V)
(W)
(dB)
(%)
CW
2450
28
12
19
60
1.2 Features and benefits
 High efficiency
 High power gain
 Excellent ruggedness
 Excellent thermal stability
 Integrated ESD protection
 Designed for broadband operation (2400 MHz to 2500 MHz)
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 Industrial, scientific and medical applications in the frequency range 2400 MHz to
2500 MHz (this product is qualified according to the solid state cooking profile)