English
Language : 

BFX30 Datasheet, PDF (4/8 Pages) NXP Semiconductors – PNP switching transistor
◁
Philips Semiconductors
PNP switching transistor
Product specification
BFX30
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
IEBO
hFE
VCEsat
VBEsat
Cc
Ce
fT
collector cut-off current
IE = 0; VCB = −65 V
−
−
IE = 0; VCB = −50 V
−
−
IE = 0; VCB = −50 V; Tj = 100 °C
−
−
emitter cut-off current
IC = 0; VEB = −5 V
−
−
IC = 0; VEB = −3 V
−
−
DC current gain
IC = −1 mA; VCE = −400 mV
40 −
IC = −10 mA; VCE = −400 mV
50 90
IC = −50 mA; VCE = −400 mV
20 −
IC = −150 mA; VCE = −400 mV
10 −
collector-emitter saturation voltage IC = −150 mA; IB = −15 µA
−
−
base-emitter saturation voltage IC = −30 mA; IB = −1 mA
−
−
IC = −150 mA; IB = −15 mA
−
−
collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz
−
6
emitter capacitance
IC = ic = 0; VEB = −2 V; f = 1 MHz
−
18
transition frequency
IC = −50 mA; VCE = −10 V; f = 100 MHz 100 −
Switching Times (between 10% and 90% levels); see Fig.2
−500
−50
−2
−500
−100
−
200
−
−
−400
−900
−1.3
−
−
−
nA
nA
µA
nA
nA
mV
mV
V
pF
pF
MHz
ton
turn-on time
td
delay time
tr
rise time
toff
turn-off time
ts
storage time
tf
fall time
ICon = −150 mA; IBon = −15 mA;
IBoff = 15 mA
−
−
45 ns
−
−
15 ns
−
−
35 ns
−
−
300 ns
−
−
250 ns
−
−
50 ns
handbook, full pagewidth
VBB
VCC
(probe)
oscilloscope
450 Ω
Vi
RB
R2
R1
RC
Vo
(probe)
oscilloscope
450 Ω
DUT
MGD624
VCC = −29.5 V; VBB = 3.5 V; Vi = −9.5 V;
T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.
Oscilloscope: input impedance Zi = 50 Ω.
Fig.2 Test circuit for switching times.
1997 Apr 16
4
 ▷