BFX30 Datasheet, PDF (2/8 Pages) NXP Semiconductors – PNP switching transistor

Philips Semiconductors
PNP switching transistor
Product specification
BFX30
FEATURES
• High current (max.600 mA)
• Low voltage (max. 65 V).
APPLICATIONS
• Switching applications.
DESCRIPTION
PNP transistor in a TO-39 metal package.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
handbook, halfpag1e
2
3
3
2
1
MAM334
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
V_CEO
I_C
P_tot
h_FE
f_T
t_off
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
turn-off time
CONDITIONS
MIN. TYP. MAX. UNIT
open emitter
open base
−
−
−65 V
−
−
−65 V
−
−
−600 mA
T_amb ≤ 25 °C
−
−
I_C = −10 mA; V_CE = −400 mV
50 90
I_C = −50 mA; V_CE = −10 V; f = 100 MHz
100 −
I_Con = −150 mA; I_Bon = −15 mA; I_Boff = 10 mA −
−
600 mW
200
−
MHz
300 ns
1997 Apr 16
2