BFT93 Datasheet, PDF (4/8 Pages) NXP Semiconductors – PNP 5 GHz wideband transistor

Philips Semiconductors
PNP 5 GHz wideband transistor
Product specification
BFT93
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I_CBO
collector cut-off current
h_FE
DC current gain
f_T
transition frequency
I_E = 0; V_CB = −5 V
I_C = −30 mA; V_CE = −5 V
I_C = −30 mA; V_CE = −5 V;
f = 500 MHz
C_c
C_e
C_re
G_UM
F
V_o
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power gain
(note 1)
noise figure
output voltage
I_E = i_e = 0; V_CB = −10 V; f = 1 MHz
I_c = i_c = 0; V_EB = −0.5 V; f = 1 MHz
I_C = −2 mA; V_CE = −5 V; f = 1 MHz
I_C = −30 mA; V_CE = −5 V;
f = 500 MHz; T_amb = 25 °C
I_C = −10 mA; V_CE = −5 V;
f = 500 MHz; T_amb = 25 °C
see Fig.2 and note 2
Notes
1. G_UM is the maximum unilateral power gain, assuming S₁₂ is zero and
G_UM = 10 log _----₁-----–------_S----₁---₁----₂^S---_-²--_-¹---₁-²----–------_S----₂--₂-----₂--_-- dB.
2. d_im = −60 dB (DIN 45004B); I_C = −30 mA; V_CE = −5 V; R_L = 75 Ω;
V_p = V_o at d_im = −60 dB; f_p = 495.25 MHz;
V_q = V_o −6 dB; f_q = 503.25 MHz;
V_r = V_o −6 dB; f_r = 505.25 MHz;
measured at f_(p+q−r) = 493.25 MHz.
MIN.
−
20
−
−
−
−
−
−
−
TYP.
−
50
5
0.95
1.8
1
16.5
2.4
300
MAX. UNIT
−50 nA
−
−
GHz
−
pF
−
pF
−
pF
−
dB
−
dB
−
mV
November 1992
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