BFT93 Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP 5 GHz wideband transistor

Philips Semiconductors
PNP 5 GHz wideband transistor
Product specification
BFT93
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
I_C
I_CM
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
f > 1 MHz
up to T_s = 95 °C; note 1
MIN.
−
−
−
−
−
−
−65
−
MAX.
−15
−12
−2
−35
−50
300
150
175
UNIT
V
V
V
mA
mA
mW
°C
°C
THERMAL RESISTANCE
SYMBOL
PARAMETER
R_{th j-s}
thermal resistance from junction to
soldering point
CONDITIONS
up to T_s = 70 °C; (note 1)
Note
1. T_s is the temperature at the soldering point of the collector tab.
THERMAL RESISTANCE
260 K/W
November 1992
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