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| BFT92_CNV_15 Datasheet, PDF (4/10 Pages) NXP Semiconductors – PNP 5 GHz wideband transistor | |||
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NXP Semiconductors
PNP 5 GHz wideband transistor
Product specification
BFT92
CHARACTERISTICS
Tj = 25 ï°C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
hFE
DC current gain
fT
transition frequency
Cc
collector capacitance
Ce
emitter capacitance
Cre
feedback capacitance
GUM
maximum unilateral power gain
(note 1)
F
noise figure
Vo
output voltage
CONDITIONS
IE = 0; VCB = ï10 V;
IC = ï14 mA; VCE = ï10 V
IC = ï14 mA; VCE = ï10 V;
f = 500 MHz
IE = ie = 0; VCB = ï10 V; f = 1 MHz
IC = ic = 0; VEB = ï0.5 V; f = 1 MHz
IC = ï2 mA; VCE = ï10 V; f = 1 MHz
IC = ï14 mA; VCE = ï10 V;
f = 500 MHz; Tamb = 25 ï°C
IC = ï5 mA; VCE = ï10 V;
f = 500 MHz; Tamb = 25 ï°C
note 2
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM
=
10
log
------------------------S----2---1----2-----------------------
ï¨1 â S11 2ï©ï¨1 â S22 2ï©
d
B
.
2. dim = ï60 dB (DIN 45004B); IC = ï14 mA; VCE = ï10 V; RL = 75 ï;
Vp = Vo at dim = ï60 dB; fp = 495.25 MHz;
Vq = Vo ï6 dB; fq = 503.25 MHz;
Vr = Vo ï6 dB; fr = 505.25 MHz;
measured at f(pï«q-r) = 493.25 MHz.
MIN. TYP. MAX. UNIT
ï ï ï50 nA
20 50 ï
ï5ï
GHz
ï 0.75 ï
pF
ï 0.8 ï
pF
ï 0.7 ï
pF
ï 18 ï
dB
ï 2.5 ï
dB
ï 150 ï
mV
November 1992
4
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