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BFT92_CNV_15 Datasheet, PDF (2/10 Pages) NXP Semiconductors – PNP 5 GHz wideband transistor | |||
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NXP Semiconductors
PNP 5 GHz wideband transistor
Product specification
BFT92
DESCRIPTION
PNP transistor in a plastic SOT23
envelope.
It is primarily intended for use in RF
wideband amplifiers, such as in aerial
amplifiers, radar systems,
oscilloscopes, spectrum analyzers,
etc. The transistor features low
intermodulation distortion and high
power gain; due to its very high
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.
NPN complements are BFR92 and
BFR92A.
PINNING
PIN
DESCRIPTION
Code: W1p
1 base
2 emitter
3 collector
lfpage
3
1
Top view
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
IC
Ptot
fT
Cre
GUM
F
dim
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
feedback capacitance
maximum unilateral power gain
noise figure
intermodulation distortion
open emitter
open base
up to Ts = 95 ï°C; note 1
IC = ï14 mA; VCE = ï10 V; f = 500 MHz
IC = ï2 mA; VCE = ï10 V; f = 1 MHz
IC = ï14 mA; VCE = ï10 V;
f = 500 MHz; Tamb = 25 ï°C
IC = ï5 mA; VCE = ï10 V; f = 500 MHz;
Tamb = 25 ï°C
IC = ï14 mA; VCE = ï10 V; RL = 75 ï;
Vo = 150 mV; Tamb = 25 ï°C;
f(pï«q-r) = 493.25 MHz
Note
1. Ts is the temperature at the soldering point of the collector tab.
TYP.
ï
ï
ï
ï
5
0.7
18
MAX. UNIT
ï20 V
ï15 V
ï25 mA
300 mW
ï
GHz
ï
pF
ï
dB
2.5 ï
dB
ï60 ï
dB
November 1992
2
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