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BFT92 Datasheet, PDF (4/8 Pages) NXP Semiconductors – PNP 5 GHz wideband transistor
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Philips Semiconductors
PNP 5 GHz wideband transistor
Product specification
BFT92
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
hFE
DC current gain
fT
transition frequency
Cc
collector capacitance
Ce
emitter capacitance
Cre
feedback capacitance
GUM
maximum unilateral power gain
(note 1)
F
noise figure
Vo
output voltage
CONDITIONS
IE = 0; VCB = −10 V;
IC = −14 mA; VCE = −10 V
IC = −14 mA; VCE = −10 V;
f = 500 MHz
IE = ie = 0; VCB = −10 V; f = 1 MHz
IC = ic = 0; VEB = −0.5 V; f = 1 MHz
IC = −2 mA; VCE = −10 V; f = 1 MHz
IC = −14 mA; VCE = −10 V;
f = 500 MHz; Tamb = 25 °C
IC = −5 mA; VCE = −10 V;
f = 500 MHz; Tamb = 25 °C
note 2
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM = 10 log ----1-----–------S----1---1----2S----2---1---1-2----–------S----2--2-----2---- dB.
2. dim = −60 dB (DIN 45004B); IC = −14 mA; VCE = −10 V; RL = 75 Ω;
Vp = Vo at dim = −60 dB; fp = 495.25 MHz;
Vq = Vo −6 dB; fq = 503.25 MHz;
Vr = Vo −6 dB; fr = 505.25 MHz;
measured at f(p+q-r) = 493.25 MHz.
MIN. TYP. MAX. UNIT
− − −50 nA
20 50 −
−5−
GHz
− 0.75 −
pF
− 0.8 −
pF
− 0.7 −
pF
− 18 −
dB
− 2.5 −
dB
− 150 −
mV
November 1992
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