BFT92 Datasheet, PDF (2/8 Pages) NXP Semiconductors – PNP 5 GHz wideband transistor

Philips Semiconductors
PNP 5 GHz wideband transistor
Product specification
BFT92
DESCRIPTION
PNP transistor in a plastic SOT23
envelope.
It is primarily intended for use in RF
wideband amplifiers, such as in aerial
amplifiers, radar systems,
oscilloscopes, spectrum analyzers,
etc. The transistor features low
intermodulation distortion and high
power gain; due to its very high
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.
NPN complements are BFR92 and
BFR92A.
PINNING
PIN
DESCRIPTION
Code: W1p
1 base
2 emitter
3 collector
fpage
3
1
Top view
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
I_C
P_tot
f_T
C_re
G_UM
F
d_im
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
feedback capacitance
maximum unilateral power gain
noise figure
intermodulation distortion
open emitter
open base
up to T_s = 95 °C; note 1
I_C = −14 mA; V_CE = −10 V; f = 500 MHz
I_C = −2 mA; V_CE = −10 V; f = 1 MHz
I_C = −14 mA; V_CE = −10 V;
f = 500 MHz; T_amb = 25 °C
I_C = −5 mA; V_CE = −10 V; f = 500 MHz;
T_amb = 25 °C
I_C = −14 mA; V_CE = −10 V; R_L = 75 Ω;
V_o = 150 mV; T_amb = 25 °C;
f_(p+q-r) = 493.25 MHz
Note
1. T_s is the temperature at the soldering point of the collector tab.
TYP.
−
−
−
−
5
0.7
18
MAX. UNIT
−20 V
−15 V
−25 mA
300 mW
−
GHz
−
pF
−
dB
2.5 −
dB
−60 −
dB
November 1992
2