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BFR94A Datasheet, PDF (4/9 Pages) NXP Semiconductors – NPN 3.5 GHz wideband transistor
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Philips Semiconductors
NPN 3.5 GHz wideband transistor
Product specification
BFR94A
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
hFE
DC current gain
fT
transition frequency
Cc
collector capacitance
Ce
emitter capacitance
Cre
feedback capacitance
Ccs
collector-stud capacitance
GUM
maximum unilateral power gain
(note 1)
F
noise figure
dim
intermodulation distortion
d2
second order intermodulation
distortion
Vo
output voltage
CONDITIONS
IE = 0; VCB = 20 V
IC = 50 mA; VCE = 20 V
IC = 150 mA; VCE = 20 V
IC = 90 mA; VCE = 20 V; f = 500 MHz
IC = 150 mA; VCE = 20 V;
f = 500 MHz
IE = ie = 0; VCB = 20 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 10 mA; VCE = 20 V; f = 1 MHz
f = 1 MHz
IC = 90 mA; VCE = 20 V;
f = 500 MHz; Tamb = 25 °C
IC = 90 mA; VCE = 20 V;
f = 200 MHz; Tamb = 25 °C
IC = 90 mA; VCE = 20 V;
f = 500 MHz; Tamb = 25 °C
note 2
note 3
see Fig.2 and note 4
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM = 10 log ----1-----–------S----1---1----2S----2---1---1-2----–------S----2--2-----2---- dB.
2. IC = 90 mA; VCE = 20 V; RL = 75 Ω;
Vp = Vo = 60 dBmV at fp = 196.25 MHz;
Vq = Vo −6 dB at fq = 203.25 MHz;
Vr = Vo −6 dB at fr = 205.25 MHz;
measured at f(p+q−r) = 194.25 MHz.
3. IC = 90 mA; VCE = 20 V;
fp = 66 MHz; fq = 144 MHz; fp + fq = 210 MHz; Vo = 48 dBmV.
4. dim = −60 dB (DIN 45004B); Ic = 90 mA; VCE = 20 V; RL = 75 Ω; Tamb = 25 °C;
Vp = Vo at dim = −60 dB; fp = 495.25 MHz;
Vq = Vo −6 dB; fq = 503.25 MHz;
Vr = Vo −6 dB; fr = 505.25 MHz;
measured at f(p+q−r) = 493.25 MHz.
MIN. TYP. MAX. UNIT
−
−
50 µA
30 −
−
30 −
−
−
3.5 −
GHz
−
3.5 −
GHz
−
3.5 −
pF
−
12 −
pF
−
1.3 −
pF
−
2
−
pF
−
13.5 −
dB
−
8
10 dB
−
5
−
dB
−
−63 −
dB
−
−
−56 dB
−
700 −
mV
September 1995
4
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