BFR94A Datasheet, PDF (2/9 Pages) NXP Semiconductors – NPN 3.5 GHz wideband transistor

Philips Semiconductors
NPN 3.5 GHz wideband transistor
Product specification
BFR94A
DESCRIPTION
NPN resistance-stabilized transistor
in a SOT122E capstan envelope.
It features extremely low cross
modulation, intermodulation and
second order intermodulation
distortion. Due to its high transition
frequency, it has a high power gain, in
conjunction with good wideband
properties, and low noise up to high
frequencies.
It is primarily intended for CATV and
MATV applications.
The BFR94A is a replacement for the
BFR94. The SOT122E footprint is
similar to that of the SOT48, used for
the BFR94.
PINNING
PIN
DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
lfpage
4
3
1
2
MBB904
Fig.1 SOT122E.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
V_CEO
I_C
P_tot
f_T
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
F
noise figure
d_im
intermodulation distortion
d₂
second order intermodulation
distortion
CONDITIONS
open emitter
open base
up to T_c = 145 °C; f > 1 MHz
I_c = 90 mA; V_CE = 20 V; f = 500 MHz;
T_j = 25 °C
I_c = 90 mA; V_CE = 20 V; f = 200 MHz;
T_amb = 25 °C
I_c = 90 mA; V_CE = 20 V;
V_o = 60 dBmV; f_(p+q−r) = 194.25 MHz
I_c = 90 mA; V_CE = 20 V;
V_o = 48 dBmV; f_p + f_q = 210 MHz
TYP. MAX. UNIT
−
30
V
−
25
V
−
150 mA
−
3.5 W
3.5 −
GHz
8
10
dB
−63 −
dB
−
−56 dB
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
September 1995
2