BFR520T Datasheet, PDF (4/12 Pages) NXP Semiconductors – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Preliminary specification
BFR520T
handboo⁴k,⁰h⁰alfpage
Ptot
(mW)
300
MRC030 - 1
200
100
0
0
50
100
150
200
Ts (^o C)
Fig.2 Power derating curve.
200
handbook, halfpage
h _FE
150
MRC028
100
50
0
10^−2
10^−1
1
10
10²
IC (mA)
V_CE = 6 V; T_j = 25 °C.
Fig.3 DC current gain as a function of collector
current.
handbook⁰, h^.7alfpage
C _re
(pF) _0.6
MRC021
0.5
0.4
0.3
0.2
0.1
0
0
2
4
6
8
10
VCB (V)
I_C = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage.
1999 Oct 18
12
handb_fo_Tok, halfpage
(GHz)
10
8
6
4
2
0
1
MRC022
VCE = 8 V
3V
10
100
IC (mA)
f = 1 GHz; T_amb = 25 °C.
Fig.5 Transition frequency as a function of
collector current.
4