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BFR520T Datasheet, PDF (3/12 Pages) NXP Semiconductors – NPN 9 GHz wideband transistor | |||
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Philips Semiconductors
NPN 9 GHz wideband transistor
Preliminary specification
BFR520T
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to Ts = 118 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
THERMAL RESISTANCE
190 K/W
CHARACTERISTICS
Tj = 25 °C, unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
hFE
Ce
Cc
Cre
fT
GUM
S212
F
PL1
ITO
collector cut-off current
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
insertion power gain
noise figure
output power at 1 dB gain
compression
third order intercept point
IE = 0; VCE = 6 V
IC = 20mA; VCE = 6 V
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IE = ie = 0; VCB = 6 V; f = 1 MHz
IC = 0; VCB = 6 V; f = 1 MHz
IC = 20 mA; VCE = 6 V; f = 1 GHz;
Tamb = 25 °C
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
IC = 20 mA; VCE = 6 V; f = 2 GHz;
Tamb = 25 °C
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
Îs = Îopt; IC = 5 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 °C
Îs = Îopt; IC = 20 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 °C
Îs = Îopt; IC = 5 mA; VCE = 6 V;
f = 2 GHz; Tamb = 25 °C
Ic = 20 mA; VCE = 6 V; RL = 50 â¦;
f = 900 MHz; Tamb = 25 °C
note 2
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM = 10 log (---1-----â------S----1---1---S-2---)2--(-1--1--2--â------S-----2--2----2----) dB.
MIN. TYP. MAX. UNIT
â
â
50 nA
60 120 250
â
1
â
pF
â
0.5 â
pF
â
0.4 â
â
9
â
pF
GHz
â
15 â
dB
â
9
â
dB
13 14 â
dB
â
1.1 1.6 dB
â
1.6 2.1 dB
â
1.9 â
dB
â
17 â
dBm
â
26 â
dBm
2. IC = 20 mA; VCE = 6 V; RL = 50 â¦; f = 900 MHz; Tamb = 25 °C;
fp = 900 MHz; fq = 902 MHz; measured at f(2pâq) = 898 MHz and at f(2qâp) = 904 MHz.
1999 Oct 18
3
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