BFQ591 Datasheet, PDF(4/11 Page) NXP Semiconductors

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BFQ591 Datasheet, PDF (4/11 Pages) NXP Semiconductors – NPN 7 GHz wideband transistor

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NXP Semiconductors

NPN 7 GHz wideband transistor

Product speciï¬cation

BFQ591

CHARACTERISTICS

Tj = 25 Â°C; unless otherwise speciï¬ed.

SYMBOL

V(BR)CBO

V(BR)CES

V(BR)EBO

ICBO

hFE

Cre

GUM

|s21|2

PARAMETER

CONDITIONS

collector-base breakdown voltage IC = 0.1 mA; IE = 0

collector-emitter breakdown

voltage

IC = 0.1 mA; IB = 0

emitter-base breakdown voltage

collector-base leakage current

DC current gain

feedback capacitance

transition frequency

IE = 0.1 mA; IC = 0

IE = 0; VCB = 10

IC = 70 mA ; VCE = 8 V

IC = 0; VCB = 12 V; f = 1 MHz

IC = 70 mA; VCE = 12 V;

f = 1 GHz

maximum unilateral power gain;

note 1

IC = 70 mA; VCE = 12 V;

Tamb = 25 Â°C

f = 900 MHz

f = 2 GHz

insertion power gain

output voltage

IC = 70 mA; VCE = 12 V;

f = 1 GHz; Tamb = 25 Â°C

note 2

MIN.

TYP.

MAX. UNIT

100 nA

250

0.8 â

GHz

5.5 â

700 â

Notes

1. GUM is the maximum unilateral power gain, assuming s12 is zero and GUM = 10 log (---1-----â------s---1---1---s-2---2)--(1---1-2---â------s----2--2----2----) dB .

2. dim = 60 dB (DIN45004B); Vp = Vo; Vq = Vo â6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 803.25 MHz;

measured at f(p+q+r) = 793.25 MHz.

Rev. 04 - 2 October 2007

4 of 11

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