BFQ591 Datasheet, PDF (2/11 Pages) NXP Semiconductors – NPN 7 GHz wideband transistor

NXP Semiconductors
NPN 7 GHz wideband transistor
Product specification
BFQ591
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.
PINNING
PIN
1
2
3
emitter
collector
base
DESCRIPTION
APPLICATIONS
Intended for applications in the GHz range such as MATV
or CATV amplifiers and RF communications subscribers
equipment.
DESCRIPTION
NPN wideband transistor in a SOT89 plastic package.
MARKING
TYPE NUMBER
BFQ591
MARKING CODE
BCp
321
Fig.1 Simplified outline (SOT89).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
I_C
P_tot
h_FE
C_re
f_T
G_UM
|s₂₁|²
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain
insertion power gain
open emitter
open base
T_s ≤ 90 °C; note 1
I_C = 70 mA; V_CE = 8 V
I_C = 0; V_CB = 12 V; f = 1 MHz
I_C = 70 mA; V_CE = 12 V;
f = 1 GHz
I_C = 70 mA; V_CE = 12 V;
f = 900 MHz; T_amb = 25 °C
I_C = 70 mA; V_CE = 12 V;
f = 900 MHz; T_amb = 25 °C
Note
1. T_s is the temperature at the soldering point of the collector pin.
MIN.
−
−
−
−
60
−
−
TYP.
−
−
−
−
90
0.8
7
MAX. UNIT
20
V
15
V
200 mA
2.25 W
250
−
pF
−
GHz
−
11
−
dB
−
10
−
dB
Rev. 04 - 2 October 2007
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