BFQ236 Datasheet, PDF (4/8 Pages) NXP Semiconductors – NPN video transistors

Philips Semiconductors
NPN video transistors
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CBO
V_(BR)CEO
V_(BR)CER
I_CES
I_CBO
h_FE
C_c
C_cb
f_T
collector-base breakdown voltage
BFQ236
I_C = 100 µA; I_E = 0
BFQ236A
collector-emitter breakdown voltage I_C = 10 mA; I_B = 0
BFQ236
BFQ236A
collector-emitter breakdown voltage I_C = 1 mA; R_BE = 100 Ω
BFQ236
BFQ236A
collector-emitter cut-off current
collector-base cut-off current
DC current gain
I_B = 0; V_CE = 50 V
I_E = 0; V_CB = 50 V
I_C = 50 mA; V_CE = 10 V;
see Fig.4
collector capacitance
I_E = i_e = 0; V_CB = 10 V;
f = 1 MHz
collector-base capacitance
I_C = i_c = 0; V_CB = 10 V;
f = 1 MHz; see Fig.6
transition frequency
BFQ236
I_C = 50 mA; V_CE = 10 V;
f = 100 MHz; see Fig.5
BFQ236A
Product specification
BFQ236; BFQ236A
MIN. TYP. MAX. UNIT
100 −
−
V
115 −
−
V
65 −
−
V
95 −
−
V
95 −
110 −
−
−
−
−
20 35
−
1.8
−
1.5
−
V
−
V
100 µA
20 µA
−
−
pF
−
pF
1
1.4 −
0.8 1.2 −
GHz
GHz
handbook⁴, ⁰ha⁰lfpage
IC
(mA)
300
MRA604
200
100
0
0
R_BE ≤ 100 Ω.
BFQ236 BFQ236A
40
80
120
VCER (V)
Fig.2 DC SOAR.
1997 Oct 02
handbook, h³alfpage
Ptot
(W)
2
MRA600
1
0
0
50
100
150
200
Ts (^oC)
Fig.3 Power derating curve.
4