BFQ236 Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN video transistors

Philips Semiconductors
NPN video transistors
Product specification
BFQ236; BFQ236A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_CER
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
BFQ236
BFQ236A
collector-emitter voltage
BFQ236
BFQ236A
collector-emitter voltage
BFQ236
BFQ236A
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open emitter
open base
R_BE = 100 Ω
open collector
T_s ≤ 115 °C; note 1; see Fig.3
Note
1. T_s is the temperature at the soldering point of the collector lead.
MIN. MAX. UNIT
−
100
V
−
115
V
−
65
V
−
95
V
−
95
V
−
110
V
−
3
V
−
300
mA
−
2
W
−65
+150 °C
−
175
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-s}
thermal resistance from junction to soldering point
CONDITIONS
T_s = 115 °C; P_tot = 2 W;
notes 1 and 2
VALUE
30
Notes
1. T_s is the temperature at the soldering point of the collector lead.
2. Device mounted on a printed-circuit board measuring 40 × 40 × 1 mm (collector pad 35 × 17 mm).
UNIT
K/W
1997 Oct 02
3